Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1.55 μm wavelength
نویسندگان
چکیده
Nine quaternary (Al,Ga,In)–(P,As,Sb) semiconductor compounds lattice matched to InP are investigated theoretically. Direct bandgap, refractive index at 1.55 μm wavelength, and thermal conductivity are calculated as a function of the composition. These material properties are important, e.g. in distributed Bragg reflectors of vertical-cavity lasers. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promise better performance of those mirrors than the common InGaAsP system.
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